| 摘要 |
PURPOSE:To prepare a single crystal having low segregation of the composition and uniform and controlled crystal direction, by contacting a single crystal with a polycrystalline material having the same or nearly the same crystal structure and composition as the single crystal, and heat-treating in a specific inert gas. CONSTITUTION:A single crystal 1 is made to contact with a polycrystalline material 2 having the same or nearly the same crystal structure and composition as the single crystal, and the integrated material is placed on the boat 4, and inserted into the core tube 14 of an oven. A flexible gas-barrier wall 6 of a partition wall 5 is brought into contact with the interface 3 of the integrated material so as to place the single crystal in the heat-treatment chamber A and the polycrystalline material 2 in the heat-treatment chamber B. Inert gas is introduced into the chambers A and B through the gas inlets 8 and 9 and the material is heated to a specific temperature by electrifying the resistant heater 12. The boat 4 is transferred toward the chmber A while introducing an inert gas A containing 0.001-1.0vol% H2 gas into the chamber A and an inert gas B containing <=0.001vol% H2 gas into the chamber B to effect the growth of the polycrystalline material 2 to the single crystal 1. |
