| 摘要 |
PURPOSE:To obtain a crystal having high uniformity, stably in high reproducibility, by supplying a feed gas containing vapor of an organometallic compound to a reaction tube at a specific flow rate, and carrying out the epitaxial growth of the crystal. CONSTITUTION:A carrier gas composed of H2 is mixed with PH3 and the flow rate is controlled by the controller 1a to a desired level. At the same time, the carrier gas is flow-controlled by the controller 1b and introduced into the bubbler to entrain the organometallic compound. The carrier gas containing the organometallic compound is controlled to a flow rate of >=40cm/sec by the controller 1c, introduced into the reaction tube 4, and subjected to the vapor- phase epitaxial growth on the substrate 6 for crystal growth on the succeptor 7 heated by the work coil 5. The decomposition of the organometallic compound during transfer to the substrate is prevented, and a broad and uniform epitaxial growth layer can be obtained in high reproducibility. |
