| 摘要 |
<p>PURPOSE:To manufacture an optical semiconductor laser having excellent characteristics with superior yield by partially heating a high impurity-concentration semiconductor layer, selectively inverting a conduction type of a low-concentration semiconductor layer by a push-in effect and introducing a current constricting mechanism to the lower section of an active layer. CONSTITUTION:An undoped N<-> type InP layer 10, an N type InP layer 11 to which Te is added, the undoped InGaAsP active layer 12, a P type InP layer 14 to which Zn is added, and an N type InGaAsP layer 15 to which Te is added are laminated onto an N type InP substrate 9 in succession. When YAG laser lights 17 are irradiated while using a metallic film 16 as a mask, the lights 17 pass through the layer 15, and are absorbed selectively by the layer 14. Accordingly, an impurity Zn is pushed into a layer 13, the layer 12, the layer 11 and the layer 10 in succession. A conduction type of the layer 10 is inverted into a P<-> type from an N<-> type at that time. The mask 16 is removed through etching, and Zn is diffused selectively so as to reach the layer 14 while using an SiO2 film as a mask. The current constricting mechanism is formed to the lower section of the active layer.</p> |
