| 摘要 |
PURPOSE:To lengthen the service life of a small number of carriers, and to increase outputs by stacking amorphous Si onto a substrate or a conductive layer on the substrate in four layers and forming IP<-> and IN<->P<->N<-> junctions by second and third layers having low concentration. CONSTITUTION:The substrates 1 to which transparent electrodes are fitted are entered into a reserve chamber 23, air is discharged, N2 21 is filled, the substrates are shifted into an adjoining chamber 24 and heated at approximately 400 deg.C, and O2 in succeeding growth layers is reduced up to 1X10<17>-1X 10<15>cm<-3>. PIN<->N Or NIP<->P by SixO1-x (0<x<1) is laminated without being brought into contact with atmospheric air in connected independent reaction chambers 25-28. The mixing of impurities is prevented mutually in the reaction chambers, the concentration is brought to 5X10<16>cm<-3> or less in I layers and to 7X10<16>-1X10<18>cm<-3> or less in P<-> or N<-> layers, and the thickness of the layers is brought to 100-2,000Angstrom in the I layers and to 0.6-0.1mu in the P<-> or N<-> layers. According to such a constitution, a small number of carriers among carriers generated by light irradiation are easily drifted to an electrode, the service life of the carriers is lengthened, and output currents are increased. |
