| 摘要 |
PURPOSE:To form timing pulse wiring in a single layer by utilizing space by diffusion resistors for limiting currents, and to simplify the manufacture of a shift register by continuously forming the diffusion resistors into each emitter region constituting a unijunction transistor. CONSTITUTION:The P type resistance layers 21A-24A for limiting currents are formed continuously to the emitters 21-24 of the unijunction transistors 1-4, and each connected to the wiring 101-103 for timing pulse wires through the insulating film windows 5a-5d of end sections by utilizing sections among the windows 5a-5d and the insulating film windows 5e-5h of collector layers 41- 44. A base 11 is disposed on both sides in a pectinate shape. When timing pulses are applied to the wiring 103 and the unijunction element 3 by the N layer 23, a P layer 33 and the N layer 43 is at ON, the resistor 23A controls emitter currents. When pulse voltage applied to the wiring 101 is selected properly, holes are injected only to the emitter 24, the unijunction element 4 is at ON, and transfer operation is allowed. An adverse effect by pulse voltage in case of transfer is prevented by the pectinate structure of the base 11. According to the constitution, processes are simplified, and yield is improved. |
