| 摘要 |
PURPOSE:To obtain a bipolar element, junction capacitance thereof is small, resistance between base-collector thereof is also small and which operates at high speed, by combining a selective epitaxial method and an impurity diffusion method and forming only a region which substantially contributes to the operation of a transistor. CONSTITUTION:The SiO2 layer 51 on an Si substrate 1 is bored and an N<+> poly Si film 6 is deposited, and the surface is changed into a single crystal film 65 through the irradiation of thermal rays. The surface is oxidized 52 selectively and isolated, and the N<+> island 65 is coated with an SiO2 layer 53. A P<+> poly Si layer 7 is formed selectively extending over the layers 53, 52. An SiO2 layer 54 is formed to the surface, a window 81 is bored to a section stacked onto then N<+> layer 65, Si layers 31, 4, 32 are formed to the window section in epitaxial shapes in the order of N-P-N and the P layer 4 is brought into contact with the P<+> layer 7, and a contact with the N<+> layer 65 is prevented. Windows 82 are bored to the layers 53, 54, Al electrodes are formed onto the layer 32 and the windows 82, and the bipolar element is completed. According to such constitution, the bipolar transistor operating at high speed and an IC using said transistor can be manufactured. |
