发明名称 GATE CIRCUIT OF GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To decrease the turn-on loss, by triggering a gate turn-off thyristor with a gate circuit of large power added to another gate circuit, detecting the delay in the rduction of applied voltge and increasing the gate current. CONSTITUTION:A forward voltage 46 is applied to a GTO31 in triggering the GTO31. A turn-on reference 41 goes to +15V at a time t6, a transistor of photocouplers 38, 40 is conductive, then a normal gate current 47 determined with a resistor 35 starts flowing, and the GTO31 enters turning-on. When the gate current is deficient, and the turning-on is delayed, a voltage 48 of a capacitor 44 reaches a Zener voltage 49 of a Zener diode 45, a photothyristor coupler 32 is conductive, a gate current determined with a resistor 37 and a capacitor 36 is superimposed on the normal gate current, the turning-on of the GTO is quickened, allowing to reduce the turning-on loss of the GTO31.
申请公布号 JPS58154931(A) 申请公布日期 1983.09.14
申请号 JP19820037252 申请日期 1982.03.11
申请人 TOKYO SHIBAURA DENKI KK 发明人 ANPO TATSUAKI
分类号 H02M1/06;H03K17/73;H03K17/732 主分类号 H02M1/06
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