Apparatus for performing solution growth relying on temperature difference technique.

摘要

A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature and on a mass production scale without deranging the control of the growth temperature applied externally of the growth apparatus and with the application of only a small heating power and only a small cooling power, by enhancing the thermal exchange efficiency through the provision of heating means, via an insulator, for the melt-containing reservoir provided on the growth boat housed within a quartz reactor and by the provision of cooling means at the bottom of the boat within the reactor.