发明名称 |
All implanted MOS transistor |
摘要 |
A MOSFET structure having DMOS characteristics fabricated using all implantation only without the use of time-consuming diffusion. Particularly the critical length of the channel is controlled by beveling one edge of an oxide layer to a predetermined slope thereby allowing transferral of ions to the substrate through the beveled edge only to a predetermined depth thereof before being completely shielded. The result is a channel having a closely controlled length to thus be relatively very short for very fast switching of low or high voltage signals.
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申请公布号 |
US4404576(A) |
申请公布日期 |
1983.09.13 |
申请号 |
US19800157744 |
申请日期 |
1980.06.09 |
申请人 |
XEROX CORPORATION |
发明人 |
RONEN, RAM S. |
分类号 |
H01L21/033;H01L21/266;H01L21/336;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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