| 摘要 |
PURPOSE:To suck and move dislocations, point defects, etc. and thus lengthen the light emitting lifetime by forming an operating region nondefective by a method wherein a heat treatment is performed, after the impact damage is applied on a semiconductor region out of the light emitting region, and accordingly denatured layers passing through an active layer are formed. CONSTITUTION:An N-GaAlAs layer 2, the GaAs active layer 3, a P-GaAlAs layer 4 and a P-GaAs layer 5 are successively laminated and formed on a GaAs substrate 1. Thereafter, a P<+> diffused layer 8 is formed by diffusing Zn. The part 9 of the active layer 3 immediately under the layer 8 becomes a light emitting region constituted of a light guide. Next, a sand blast is performed on the both sides of the layer 8 in parallel and in band form, and then the denatured layer 10 is formed by impact damages. The denatured layer 10 is formed into the depth passing through the active layer 3. Succeedingly, the heat treatment at 600 deg. for an hour is performed in an H atmosphere. In this manner, the dislocation and defect generated at the interface of each layer move to the denatured layer 10, and therefore the dislocation or defect in the operation region such as the region 9 is eliminated. |
