发明名称 |
Semiconductor device having reduced capacitance and method of fabrication thereof |
摘要 |
A spacer region is provided between the channel stop region and the adjacent portion of the active region of a semiconductor device to reduce the capacitance therebetween. The spacer region may be formed by allowing at least a portion of a conductive line formed on the surface of the device to overlap the active region adjacent the channel stop region.
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申请公布号 |
US4404579(A) |
申请公布日期 |
1983.09.13 |
申请号 |
US19800201102 |
申请日期 |
1980.10.28 |
申请人 |
MOTOROLA, INC. |
发明人 |
LEUSCHNER, HORST |
分类号 |
H01L29/06;(IPC1-7):H01L29/78;H01L29/04;H01L29/34 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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