| 摘要 |
PURPOSE:To contrive to prevent the increase of contact resistance of the gate part by a method wherein the film wear due to the etching of the gate part is eliminated when contact holes are simultaneously formed by employing dry etching to the gate part and source drain parts. CONSTITUTION:A thermal oxide film 2, a metallic film 3 and a protection film 4 are formed on a semiconductor substrate 1. Next, with a pattern 5 formed on resist as a mask, the protection film 4 is etched by a dry method, and further the metallic film 3 is etched by a dry method by the same mask. Next, an ion implantation is performed by using the same mask, and accordingly the source and drain regions 6 are formed. The resist pattern 5 is removed, then a protection film 7 is formed over the entire surface of the substrate, and an aperture part is selectively formed on the protection film 7 by a dry etching method, further the oxide film 2 thereunder is also removed resulting in the formation of contact holes 8 and 9. |
