发明名称 Semiconductor device
摘要 A semiconductor device which, due to a feedback current flowing through a resistance present between the gate region and a primary current path channel region, exhibits a very steeply rising drain current versus voltage characteristic and has a very small resistance during conduction.
申请公布号 US4404575(A) 申请公布日期 1983.09.13
申请号 US19820374301 申请日期 1982.05.03
申请人 ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI 发明人 NISHIZAWA, JUN-ICHI
分类号 H01L29/80;H01L29/06;H01L29/51;H01L29/739;H01L29/772;H01L29/78;(IPC1-7):H01L29/72 主分类号 H01L29/80
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