| 摘要 |
PURPOSE:To prevent the decrease of withstand voltage between an emitter and a collector, by setting the collector impurity density in the neighborhood of the depth of formation of a base junction at the collector impurity density of a pile-up region or more. CONSTITUTION:First, an element isolation and insulation film 17 is formed on the first conductivity type semiconductor substrate 14 serving as the collector region. Next, the first conductivity type impurity introducing region 19 having impurity density more than in the neighborhood of the film 17 is formed at the position approximately corresponded to the depth of the base junction, of a partial region contacted on the film 17. Then, the second conductivity type base region 20 which has the junction part in a region 19 and contacts the film 17 is formed. Finally, the first conductivity type emitter region 21 wherein one end part contacts the region 20 and the film 17 is formed. Thereby, since the withstand voltage between the emitter and the collector can be secured, the qualities of a bi-polar LSI, etc. can be improved. |
