| 摘要 |
PURPOSE:To prevent metal silicide and polycrystalline silicon from peeling off and to improve dielectric breakdown voltage by including the process of forming a metal silicide conductive layer via an amorphous silicon film. CONSTITUTION:source and drain regions 5, 6 are formed on a silicon substrate 4 and, after a gate SiO2 film 1 is formed, an amorphous silicon film 10 1,500Angstrom thick is deposited thereon. Then an MOSi2 film 3 2,000Angstrom thick is deposited. In this case, if the silicon substrate is maintained at temperatures as low as 800 deg.C, because the sputtered silicon film is amorphous, the crystal interface is not observed. Subsequently, patterning is added by means of the photo process to form a gate electrode comprising the silicon film 10 and the film 3. |
