发明名称 |
Circuit and method for dynamically adjusting the voltages of data lines in an addressable memory circuit |
摘要 |
A two-phase memory circuit provides for adjusting the precharge voltage of a data line to substantially equal the threshold voltage of a sense amplifier coupled to the data line during a first phase so that a relatively small voltage change on the data line during a second phase can be detected by the sense amplifier.
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申请公布号 |
US4404660(A) |
申请公布日期 |
1983.09.13 |
申请号 |
US19800152950 |
申请日期 |
1980.05.23 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MENACHEM, ABRAHAM |
分类号 |
G11C7/12;G11C17/08;(IPC1-7):G11C11/40 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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