发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that portion of the semiconductor substrate which is exposed through the diffusion window; (c) forming an undoped poly-silicon layer on the impurity-doped poly-silicon layer; (d) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer and undoped poly-silicon layer, thus diffusing the impurity from the impurity-doped poly-silicon layer into the semiconductor substrate through the diffusion window and converting the undoped poly-silicon layer to a silicon oxide layer; (e) forming on the silicon oxide layer an oxidation-resisting mask layer in a desired pattern; and (f) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer, silicon oxide layer and mask layer, thus converting those portions of the impurity-doped poly-silicon layer which lie beneath those portions of the silicon oxide layer which are exposed through the mask layer to impurity-doped silicon oxide layers, whereby the remaining portions of the impurity-doped poly-silicon layer provide an interconnection electrode layer having a desired pattern.
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申请公布号 |
US4403392(A) |
申请公布日期 |
1983.09.13 |
申请号 |
US19800152305 |
申请日期 |
1980.05.22 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OSHIMA, JIRO;AOYAMA, MASAHARU;YASUDA, SEIJI;YONEZAWA, TOSHIO |
分类号 |
H01L29/43;H01L21/225;H01L21/28;H01L21/321;H01L23/522;H01L23/532;(IPC1-7):H01L21/22 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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