| 摘要 |
An integrated sputtering means having a housing including a first cavity and a second cavity spaced a predetermined distance from the first cavity and wherein the housing includes a predetermined path extending between the cavities, a mount for supporting an ion target formed of at least one selected material in the interior of the housing wherein the ion target is positioned therein with a selected surface of the ion target positioned contiguous the predetermined path and between said cavities forming a lower boundary for the predetermined path and wherein the mount or the ion target includes means for containing electrons adjacent the ion target selected surface, an electron emitter positioned in one of the cavities, an electron collector positioned in the other of the cavities, and magnetic elements positioned along the predetermined path and located in a predetermined spaced relationship from the ion target selected surface for producing substantially linear shaped lines of magnetic flux between the magnetic elements which define a B field wherein the direction of the B field of the magnetic elements is oriented in a predetermined direction relative to the cavities and to the predetermined path adjacent the selected surface to produce a controlled magnetic field of flux having at least one selected flux density adjacent the selected surface wherein the selected surface of said ion target, said electron containing means and said substantially linear lines of flux define a plasma containment envelope which entraps and contains a plasma adjacent the selected surface to obtain controlled uniform target erosion is shown. A method for utilizing the integrated sputtering means is also shown.
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