| 摘要 |
PURPOSE:To obtain an electrophotographic receptor having high performance, by decomposing a gas contg. silane, N2 or a hydrocarbon gas by high-frequency glow discharge and depositing an amorphous silicon (a-Si) insulating layer contg. N or C of a specified thickness on the surface of an a-Si photoreceptor. CONSTITUTION:An insulating layer 4 made of 1-SixNy or a-SixCy (x, y being proportions of Si, and N or C) and <=0.1mum thickness is formed on a conductive substrate 1 of Al or the like, and a photoconductive layer 2 is formed with a-Si contg. either of N and C, and B or P on the layer 4 to form a photoreceptor. On this layer 2, an insulating layer 3 made of a-SixNy or a-SixCy same as the layer 4 is formed to 1-20mum thickness thicker than the layer 4. The layers 4, 2, 3 can be laminated continuously with the same plasma CVD method device. The photoreceptor thus obtained is subjected to simultaneous surface charging and tungsten lamp irradiation, and the following irradiation with a fluorescent lamp to form a latent image, and a high-contrast image can be obtained both by normal and reversal developments. Two or more color development can be made by specified exposure and charging methods, too. |
