| 摘要 |
PURPOSE:A coating composition for protecting semiconductor devices that is composed of a reaction product from a diaminosiloxane,a silicon-free organic diamine and an organic tetrabasic acid dianhydride, thus causing no malfunctioning by incidence of alpha-rays from the outside of the device. CONSTITUTION:The objective composition is obtained by reaction between (A) a diaminosiloxane of formulaI, (B) an organic diamine such as 4,4'-diaminodiphenyl ether and (C) an organic tetrabasic acid dianhydride such as pyromellitic dianhydride and contains polyamideacids with 0.1-20mol% of recurring units of formula II and 80-99.9mol% of recurring units of formula III. A semiconductor device consists of the semiconductor memory element, the inorganic layer for sealing the memory element and the protecting layer of the above composition between the memory element and the sealing layer. Preferably, the solvent and monomers are purified so that the total content of uranium and thorium becomes less than 0.2 ppb. |
