| 摘要 |
PURPOSE:To separate the excessive silicon in aluminum from the impurity diffusion layer of a contact region and to prevent the increase of the electric resistances of an aluminum wiring and the impurity diffusion layer by forming a titanium tungsten alloy layer on the aluminum wiring. CONSTITUTION:A titanium tungsten alloy 7 is formed on an aluminum wiring 4. Then, an excessive silicon lump 5a is gathered on the interface of the wiring 4 and the alloy 7 at the time of heat treatment. So the silicon lump 5a is gathered at the top of the wiring 4 and the wiring 4 and the impurity diffusion layer 2 can be brought into contact directly. This prevents the increase of the electric resistance at the contact region.
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