| 摘要 |
PURPOSE:To obtain a semiconductor device including an FET of large capacity with good reproducibility by providing parallel grooves on an insulating layer, burying a single crystal Si to such grooves and by providing gate electrode through an insulating film crossing this Si layer. CONSTITUTION:An SiO2 layer 12 is formed in the thickness of 1mum on a substrate 11 consisting of metal and alumina etc., a groove 13 of about 25X12mum is formed and bottom film thickness is set to about 0.1mum. At this time, when a side of groove 13 exceeds the length of about 40mum, thickness of the single crystal layer formed in the groove becomes uneven, namely the center becomes thinner. Then, a non-crystal Si 14 is grown and a single crystal layer 15A is formed by irradiating an energy beam. At this time, since a size of groove 13 is selected, a single crystal layer having the uniform thickness can be obtained. A gate electrode 16 is provided in common, for example, to the layers 15A- 15D and the source 17, drain 18 provided on the layers 15A-15D are connected in parallel with the A wirings 19, 20. According to this structure, there is no impurity diffusion and pattern disturbance and a high capacity FET can be obtained with good reproducibility. |
