| 摘要 |
PURPOSE:To stably and easily perform high temperature operation by a method wherein a plurality of semiconductor layers are grown on a substrate by a liquid epitaxial method, etc. resulting in the reduced deterioration of the laser characteristic. CONSTITUTION:An N type InP clad layer 7, a non-doped or N or P type InGaAsP layer 8 serving as the first active layer, a P type InP clad layer 9, a P type InGaAsP layer 10 serving as the second active layer and a P type InP clad layer 11 are successively formed on the N type InP substrate 6 by a liquid epitaxial growth. Next, the semiconductor outside the stripe is removed from the surface of the layer 11 to the depth reaching the layer 9. Thereafter, an N type InP layer 12, a P type InP layer 13 and a P type InGaAsP layer 14 are successively formed by an epitaxial growth. The thickness of the layer 9 is set shorter than the length of electron diffusion, and set so that the mode extended over the active layers 8 and 10 does not turn into multi-modes. |
