| 摘要 |
PURPOSE:To obtain accurate patterns, by a method wherein when a photosensitive film formed on the surface of a semiconductor wafer is adhered to a mask by vacuum extraction and exposed to light for performing photoetching, the sensitized surface is disposed to face the mask with interval determined based upon resolution, image quality and pitch error, and then they are adhered with each other by vacuum extraction. CONSTITUTION:Most defective adhesion between a photosensitive film formed on a semiconductor wafer and a mask concentrates upon the central part of the mask. This is because the adhesion can not be performed in the ideal manner as that begins at the center then spreads out to the periphery. Accordingly, when the mask is adhered to the photosensitive film by vacuum extraction, the surface and mask are disposed facing with each other with interval determined based upon resolution, image quality and pitch error, then the mask is shaped out to the convex form by vacuum extraction so that the surface and mask are first adhered at the central part then spreadingly adhered to the peripheral part. When the diameter of the wafer is 4 inches, the interval should be 30 10mum. |
