| 摘要 |
PURPOSE:To suppress the generation of parasitic reaction products by continuously performing all processings including chemical process, washing and drying under the dark environmental condition where every external light and stray light covering the ultraviolet-visible-infrared lights are shielded at the time of performing chemical processing to the crystal surface of compound semiconductor. CONSTITUTION:A chemical solution 5 consisting of HF and H2O in the volume ratio of 1:1 is contained in a reaction vessel 1 having an overflow hole 9 and a basket 4 accommodating a crystal previously is provided within the vessel 1 while a rotatable supporting rod 3 supporing such basket is moved vertically through a cover 2. At this time, the basket 4 is located upward so that it does not in contact with the solution 5 and the inside of vessel 1 is kept in the dark environmental condition. Then, the supporting rod 3 is moved downward, causing the basket 4 to be dipped into the solution 5. After the specified period used for the surface processing, the supporting rod 3 is moved upward. Simultaneously, a valve 6 at the exhaust hole is opened in order to drain the reactive solution. In addition, a solution which does not react with pure water, crystal of alcohol and the like is supplied from the inlet hole 7 and it is sprayed to the surface of crystal through a spraying plate 8 for the purpose of washing. |
