| 摘要 |
PURPOSE:To restore injuries due to implantation, and to reduce secondary defect after heat treatment, by a method wherein when impurities are introduced into a semiconductor by ion implantation, the crystal damage rate at the position of the projected path-length just after the implantation is controlled to the value above the specified value. CONSTITUTION:In order to control the crystal damage rate due to the ion implantation below 0.05% or above 2%, the temperature of a semiconductor at the time of the implantation is controlled within the range between the temperature of liquid nitrogen and 500 deg.C. Elements which are the same as that constituting a semiconductor substrate or electrically inert elements such as F, Cl, He, Ne, Ar are implanted as the single ionic species or the ionic species of a compound with impurity elements. In the figure, the ordinate (y) shows the damage rate at the projected path-length Rp, and the abscissa (x) shows absolute temperature of the substrate during the ion implantation. It should be noted that when the amount of the implantation is the same, the more the temperature rises the more the injury rate decreases, and vice versa. Namely, the secondary failures generated during the heat treatment for restoring damages due to the implantation are reduced by optimizing the temperature and the amount of the implantation. |
