| 摘要 |
PURPOSE:To prevent short-circuit fault by leadout electrode and improve integration density by providing a leadout electrode after newly extending an impurity region to the region exposed by a connecting hole. CONSTITUTION:When an N layer 12 is provided on the P type Si substrate 10 through a field oxide film 11, it is covered with an SiO2 film 13, the SiO2 13 is etched by the HF liquid using a resist mask 14, and a connecting hole 15 is formed, the surface of substrate 10 is partly exposed since the mask window 14a is deviated from the N layer 12. The resist 14 is removed and the same impurity as the layer 12 is implanted 20 and thereby the N layer 12a is extended to a substrate 100. A leadout electrode layer 17 is provided and a patterning 18 is carried out, thus completing a device. According to this structure, a leadout electrode 16 which is directly connected only to the N layer 12 can be formed not depending on positional deviation of the connecting hole 15 and therefore integration density can be improved by sufficiently making small the layer 12 and fault by short-circuit of leadout electrode can be prevented. |
