| 摘要 |
PURPOSE:To enable self-alignment through methods except a lift-off method, to avoid a malfunction due to the interposition, etc. of a resist residue and to improve yield by constituting a source electrode and a drain electrode of transparent conductive films. CONSTITUTION:With a thin-film transistor, a gate electrode 22, a gate insulating film 23 and a semiconductor layer 24 are laminated on a transparent insulating substrate 21 in succession, a source electrode 25 and a drain electrode 26 are formed, holding a channel section 27 on the semiconductor layer 24, and the source electrode 25 and the drain electrode 26 are constituted of transparent conductive films. A negative type resist 29 is applied onto the transparent conductive films 28 and beams are irradiated from the back side of the insulating substrate 21, and the resist 29 in a section corresponding to the gate electrode 29 is removed, thus etching only the section corresponding to the gate electrode 22, then allowing self-alignment. |
