| 摘要 |
PURPOSE:To obtain the TFT having excellent characteristics by a method wherein a semiconductor layer is formed using an amorphous silicon layer, and a gate insulating layer is formed by a silicon nitride film layer which was formed by performing a plasma CVD method using mixed gas of SiH4, N2 and H2. CONSTITUTION:Glass is used for a substrate, Mo is vapor-deposited in the thickness of approximately 1,500Angstrom using an electron beam, and a gate electrode is formed on the substrate by performing an ordinary photo-etching method. Then, a silicon nitride film of 1,500Angstrom in thickness is formed in a reaction chamber using a capacity coupling type RF plasma CVD device. Subsequently, electric charge is brought to a stop, a reaction chamber is made vacuous to the degree of 1X10<-5>Torr, substrate temperature is set at 250 deg.C, and SiH4 gas is sufficiently filled in the reaction chamber. Glow discharge is started again, the discharge is brought to a stop when an amorphous silicon layer is formed at 2,000Angstrom , the substrate temperature is lowered to 200 deg.C or below, and the sample is picked out. After Al has been vapor-deposited to approximately 3,000Angstrom in thickness using a vacuum-deposition method, a source and drain electrode is formed. |
