| 摘要 |
PURPOSE:To enable to form easily a resistance body or an electric capacity body having high precision in the integrated circuit by a method wherein the resistance body and the electric capacity body, or the respective bodies thereof connected to the first integrated circuit device are formed as the second integrated circuit device on the wiring electrodes in the uppermost layer of the first integrated circuit device consisting of transistor, etc., interposing insulating films between them. CONSTITUTION:The first integrated circuit device containing the MOS field effect transistor, etc., is formed according to a P type Si substrate 1, an SiO2 film 2, a gate oxide film , N type diffusion layers 4, 5, a gate electrode 6 consisting of poly-Si, and the Al electrodes 7, 8, 9, 10, the second circuit device formed by connecting the resistance body 12 consisting of chrome silicide and the electric capacity body consisting of a dielectric film 15 interposed between the Al electrodes 13, 14 and by connecting to the ground electrode 9 is formed on the interlayer insulating film 11 consisting of CVD SiO2, and a CVD SiO2 film 16 is provided as the protective film. By providing the resistance body and the electric capacity body at the uppermost part of the integrated circuit device like this, trimming of the resistance body and the electric capacity body can be performed at the final process. |
