| 摘要 |
PURPOSE:To obtain the titled device structure wherein software errors are hard to occur, by forming a GaAs field effect transistor in a diffused region which has a reverse conducting type with respect to source and drain regions so that the concentration of the transistor is higher than that of a substrate. CONSTITUTION:The concentration of a P<+> region 111 is about 10<15>-10<17> and the carrier concentration is higher than that of GaAs substrate 101. When the P<+> region 111 is added and alpha rays are irradiated on the GaAs substrate 101, pairs of electrons and holes are generated. At this time, the life time of the pairs in the low concentration GaAs substrate 101 is long, but the life time in the high concentration P<+> region 111 is short. Most of the electrons collected in the source and drain regions 102 and 103 are disappeared in the P<+> region 111, and potential change in the regions of N1 and N2 becomes small. As the other effects, the junction capacity between the N<+> source and drain regions and P<+> region becomes larger than the conventional examples, and the software errors are hard to occur. |
