| 摘要 |
PURPOSE:To make it possible to enhance the degree of integration of the Josephson integrated circuit, by forming the resistor films for the integrated circuit by an intermetal compound AuAl2, thereby enhancing the electric resistivity of the resistor films and reducing the occupying area. CONSTITUTION:The resistor film of the intermetal compound AuAl2 can be formed by continuously evaporating Au and then Al at a temperature higher than 150 deg.C. Or the film can be formed by the heat treatment for about two hours at a temperature higher than 150 deg.C after the evaporation at a room temperature. At this time, the respective films are formed so that the ratio of the film thickness of the evaporated films becomes an expression: Al evaporated film: Au evaporated film=1.96:1. The resistance of the thin film depends on the evaporation speed. When the films are formed at the same evaporating speed, the sheet resistance of AuAl2 is about 5-6 times higher than that of AuIn2 if the film thicknesses are the same. |
