| 摘要 |
PURPOSE:To obtain a high power output and high performance at low cost, by narrowing the width of a gage resistance layer which is arranged so that the longitudinal direction is aligned with the direction perpendicular to the end part of a diaphragm as compared with the width of the other gage resistance layer. CONSTITUTION:The gage resistor Rr has its longitudinal direction along the direction perpendicular to the edge part of the diaphragm. The gage resistor Rt has the longitudinal direction in the tangential direction of the edge part of the diaphragm. Of these resistors, the width (w) of the gage resistors Rr is made narrower than that of the gage resistor Rt. In this way, the width (w) of the gage resistor Rr is made narrower than the width of the gage resistor Rt, and the size effect of the gage resistor Rr described above is decreased. Thus the inexpensive semiconductor pressure sensor, which has excellent balance in sensitivity between both gage resistors Rr and Rt, the high output power, and the high performance, is obtained. |
