| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit having good data holding characteristics and fast transient response by inserting two-terminal circuit including a diode between the cross-connected drains and gates of a flip-flop circuit in series. CONSTITUTION:In a figure, 9 is a memory cell consisting of the flip-flop circuit, and 10a, 10b, 10c, and 10d are diodes. The reverse parallel circuit of the diodes 10a and 10d is inserted in series between the cross-connected gate of an FET4a and the common node 5b, and the reverse parallel circuit of the diodes 10c and 10d is inserted in series between the cross-connected gate of an FET4b and the common node 5a. The difference between the voltage at the point 5a and 5b concerned to a point E is greater than the difference at a point C and the distance N between transfer characteristics 8c and 8d is, in addition, longer than usual, to hardly cause a data inversion during reading operation. Therefore, even though a gain is small, the margin of data holding characteristics during reading is secured to increase conductances 6a and 6b, and 3a and 3b and to speed up transient response. |
