| 摘要 |
PURPOSE:To equalize the impedance of single transistors as well as to give excellent input and output and efficiency characteristics for the titled semiconductor device by a method wherein, when a common electrode and a bridge are connected, the connection is performed in such a manner that the value of inductance to be connected between the common electrode and the bridge will become the minimum in the center part of the bridge. CONSTITUTION:The conductive fine wire, to be connected from an earth electrode to a bridge 17, are formed in such a manner that their length will be varied at the part between common electrodes. The conductive fine wires, which were formed at both ends of an element 14 and will be connected from the common electrode of single transistors T4 and T6 to the bridge 16, have the same length and the conductive fine wire, to be connected from the common electrode of the single transistor T5 to the bridge 17, have the length shorter than that of the single transistors T4 and T6. |
