| 摘要 |
PURPOSE:To obtain a semiconductor device which has fast operating speed and excellent high frequency characteristics equally even under low and high electric fields by utilizing a combination of the properties of arsenided gallium and phosphided indium. CONSTITUTION:A buffer layer 2 made of arsenided gallium (GaAs), a layer 3 made of phosphided indium (InP) containing no impurity and a layer made of arsenided gallium (GaAs) containing an n type impurity are sequentially formed on a substrate 1 made of semi-insulating arsenided gallium (GaAs), thereby forming source and drain electrodes 6, 6' are gate electrode 7. When a negative voltage is applied to a gate electrode 7, a pinch-off occurs at the drain 6' side of the gate electrode 7, electrons are transferred from the layer 4 to the layer 3, thereby performing a transistor operation. |
