| 摘要 |
PURPOSE:To increase the positioning allowance when a pattern is formed as well as to simplify the process of manufacture by a method wherein, after a semiconductor film has been formed on a substrate, a conductive film is coated on said semiconductor film, then the desired wiring pattern is formed by performing an etching on the conductive film, and an insulating process is performed on the semiconductor film using the conductive film as a mask. CONSTITUTION:Source and drain regions 15a and 15b are exposed while an SiO2 film 18 is left in such a manner that it is covering the side wall of a gate electrode 13. Then, after a contact hole of desired shape has been provided on the SiO2 film 16 located on the gate electrode 13 and the two layers of a polycrystalline silicon film 17, a silicon film 19 is formed on the whole surface. Then, an Al film 20 is coated on the polycrystalline silicon film 19 and an Al electrode wiring pattern of desired shape is formed thereon. Then, the polycrystalline silicon film 19, which was exposed using the Al film 20 as a mask, is converted into an oxide film 21 by performing a plasma anodizing method, and an MOS transistor is formed. |
