| 摘要 |
PURPOSE:To prevent the forward rectifying current of a gate at the output saturating time by forming a high specific resistance region on at least one region of the region which is interposed between a source region and a gate region, and between the gate region and a drain region. CONSTITUTION:High specific resistance region 16 is formed from the surface side to the middle of an operation layer 14 on a channel region interposed between a source region 11 and a gate region 12 and a channel region interposed between the gate region 12 and a drain region 13. The region 16 is selectively oxygen ion implanted with a photoresists as a mask. When oxygen ions are implanted, in case that protons are implanted to erase carrier, since it returns to the original state even if one becomes high specific resistance layer by a heat treatment, it is performed after a high temperature treatment is finished. |
