| 摘要 |
PURPOSE:To enable to perform a photosensitivity adjustment by large photosensitivity and bias voltage alternation and to obtain a sufficient reverse current blocking property by covering a transparent substrate with a NESA electrode and an opaque electrode which is contacted with the NESA electrode and forming a photodiode and a blocking diode on the NESA electrode. CONSTITUTION:Numeral 22 designates a transparent substrate generally made of glass, 24 designates a transparent electrode made of oxidized indium (In2O3) called ''NESA'' or SnO2 or ITO, numeral 26 designates an opaque electrode made of platinum (Pt), chromium (Cr) or nichrome, numerals 28, 30 designate amorphous silicon layers, numerals 32, 34 designate opaque electrodes made of aluminum (Al) which does not make contact with the a-Si layers 28, 30. The layers 28, 30 make Schottky barrier junction with the electrodes 24, 26, the 24, 28, 32 form a photodiode 10, and the 26, 30, 34 form a blocking diode 20. A light L is incident from the side of the substrate 22. |
