| 摘要 |
PURPOSE:To enhance the throughput in a process of subjecting a base material by reactive etching by a method wherein isoamyl acetate (IAA) is used in a solution for the development of polymethyl methacrylate (PMMA), thereby the thickness of an unexposed film is not reduced during the developing process under an electron beam with an acceleration voltage of not lower than 30kV and precision and resolution in the process is improved. CONSTITUTION:An IAA solution is used to develop PMMA. A PMMA/IAA system, with the initial PMMA thickness set at 1mum and the IAA temperature set at 28 deg.C, suffers from no reduction in thickness in the unexposed part when the system is exposed to development under an electron beam with an acceleration voltage not lower than 30kV, for example, 40kV. The time needed for the development of a PMMA/IAA system to complete depends upon the temperature of the developing solution. When the temperature of the solution is not lower than 35 deg.C, developing speed is very high, and the process is completed within only 2min at 45 deg.C. |
