| 摘要 |
PURPOSE:To detect marking position with high accuracy by generating flat surface mark by covering thorough holes on a substrate with a thin film and by measuring electron beam intensity having passed said mark. CONSTITUTION:A through hole 6 is formed by anisotropic etching to a Si substrate 1, a window is covered with a SiO2 thin film 7 and thereby a flat surface mark is formed. The mark is scanned by electron beam 8. Thereby, intensity of electron beam having passed said hole 6 can be detected 8 and a detected signal S can be obtained. This signal is then subjected to the waveform shaping and a marking position can be obtained. Since the mark surface is flat, even when the mark is covered with various kinds of thin films through the element preparation process, shape of hole 6 does not change. Accordingly, a mark detection signal waveform is not deformed and the electron beam having passed the hole reaches a detector 8 almost without any attenuation. Thereby, a high peak value can be obtained and highly accurate detection of marking position can be realized. |
