| 摘要 |
PURPOSE:To obtain a GaAs memory which has high integration degree and low consumed power by a method wherein, using a semi-insulating GaAs, the load resistor of one transistor of FF constituting a static memory cell is formed immediately on the gate of the other transistor. CONSTITUTION:The static type memory is constituted of transistors (TR) Q1- Q4, load resistors L1 and L2, a power source VDD, an earth potential VSS, data line D, a complementary data line anti D, and a word line WL, then the FF is constituted of the resistors L1 and L2, and TRQ3 and Q4, and the TRQ1 and Q2 are used as transfer gates. To constitute it, first the semi-insulating GaAs substrate 1 is used, and thus N<+> type source and drain regions 2 and 3 of the TR element Q3 are frmed. Next, these regions are connected by a shallow N type region 4 an active region, then a polycrystalline semi-insulating GaAs layer 6 serving as the load resistor L2 is provided immediately thereon via a gate metal 5, and it is connected to the power source VDD. |
