| 摘要 |
PURPOSE:To obtain a field effect transistor which does not affect a surface depletion layer by forming by donor impurity ion implantation an N type layer on the surface of a semiconductor on the gate recess part. CONSTITUTION:An N type layer 2 is formed by silicon (Si) or sulfur (S) ion implantation on a semi-insulating substrate 1. A recess structure is formed by chemical etching, and source and drain electrdes 4, 5 are formed of AuGe/Au on the outside. A mask material, i.e., dioxidized silicon film 9 is formed on the bottom of a gate electrode forming part, i.e., a recess structure, and an N<+> type layer 8 is formed by implanting silicon. A dioxidized film 9 is removed, and a gate electrode 3 is formed of aluminum (Al). |
