| 摘要 |
<p>PURPOSE:To eliminate the generation of cracks generated between resistance films covering the followings, by forming the thickness thick, when the lower electrode of a capacitor element and the electrode of a resistor element are provided on a substrate. CONSTITUTION:A metallic film 13 approx. 4,000Angstrom thick is adhered on the ceramic substrate 12 to form the lower electrode of a capacitor element and the electrode of a resistor element, and an Ni film 14 which is hardly etched by the liquid etching the film 13 is provided thereon. Next, resist films 15 of the fixed pattern are formed on the film 14, and, with these as masks, the film 14 is etched, accordingly films 16 constituted of films 14 a size smaller than the films 15 are let to remain thereunder. Thereafter, the film 13 is etched with the films 15 and 16 as masks, thus the lower electrode 17 of a capacitor element and the electrode 18 of a resistor element with inclined side surfaces are formed under the masks. An anodic oxide layer 19 is provided at a part of the electrode 17 by removing the mask, then the entire surface is covered with the resistant film 20, approx. 500Angstrom thick, and accordingly an oxide layer 21 is provided between the electrodes.</p> |
