| 摘要 |
PURPOSE:To obtain a device of good high frequency characteristic in self-alignment by a method wherein an oxide film, a polycrystalline Si thin film and a nitride film are formed by lamination on a substrate, and etching is performed using an aperture provided on the nitride film resulting in the removal of the lower layer film, then a necessary region is buried therein, when a small-sized P-N junction or a bi-polar transistor is formed. CONSTITUTION:An oxide film 12, P type polycrystalline Si thin film 13 and a nitride film 14 are formed by lamination on an N type Si substrate 11, then the aperture part 15 is provided on the film 14, and the thin film 13 exposed in the aperture part 15 and successively the film 12 are removed by etching so as to become wider than the aperture part 15. Next, a P type Si thin film 17 is buried in the aperture part end 16 enlarged in this manner while it is arranged to the surface of the film 13, then an N type region 18 is provided therein, and accordingly the P-N junction 19 is generated between the thin film 17. Thereafter, an Al external electrode 102 is mounted on the region 18, and the same Al external electrodes 103 is mounted on the thin film 13 by opening apertures on the film 14 respectively. Thus, a desired region is obtained without depending on a complicated method of superposition of patterns. |
