| 摘要 |
PURPOSE:To extremely improve the etching control of a thin film by holding an AlGaAs-GaAs hetero junction semiconductor substrate at the prescribed temperature and etching it with gas containing at least one of chlorine and bromine. CONSTITUTION:A semiconductor substrate 8 to be treated is mounted on an anode 6, and held by a resistance heater 9 at the prescribed temperature. Cl2 gas introduced from a Cl2 gas introduction source 10 into a vacuum chamber 5, a high frequency voltage is applied between the electrodes 6 and 7, thereby producing plasma discharge between the cathodes to collide reactive ions to the substrate 8 and to etch it by physical sputtering effect and chemical reacting effect. When the temperature of the substrate is held about at 200 deg.C, the selectivity of etching AlxGa1-xAs (x=0.3) to the GaAs becomes preferable. |
