| 摘要 |
PURPOSE:To eliminate a shortcircuit trouble between the emitter and the base of a semiconductor device due to electrodes formed in the same window by composing a mask in case of introducing an impurity of a silicon oxidized nitride film, thereby suppressing an unnecessary side etching in the step of washing out with an HF series solution. CONSTITUTION:A silicon oxidized nitride film 14 is selectively removed with a 50[%] HF as an etchant, and a window is formed on the region to be formed with an emitter. An emitter region 15 is formed by introducing by an ion implantation method impurity ions from the window formed at the film 14 into a silicon substrate, and activating it. Then, when an Al film is covered and emitter electrode wirings 16 and base electrode wirings 17 are patterned, the film 14 operates as a preferable insulating film. and an emitter electrode 16 which is contacted with the region 15 in the window is disposed in the region 15, the shortcircuit trouble between the emitter and the base can be eliminated. |
