| 摘要 |
PURPOSE:To manufacture a power MESFET having large power gain at a high frequency and preferable saturated output in a high yield inexpensively with good reproducibility by setting the peak of an electron density by the front stage ion implantation via an insulating film in the vicinity of the surface of crystal, then removing the insulating film and then performing an ion implantation and annealing at the rear stage. CONSTITUTION:After an oxidized film (SiO2)35 is accumulated on a GaAs semi- insulating substrate 30, Si ions of the front stage is implanted to form an impurity layer 36. Then, the film 35 is removed, and an Si ion implantation of rear stage is performed. Si ions are activated by annealing to form an operating layer 31. A patterning is performed on the layer 31, and AuGe is deposited. Then, an alloying is performed to form a source electrode 32 and a drain electrode 34. Subsequently, a patterning is performed to deposit aluminum. A gate electrode 33 is eventually formed to obtain power MESFET. The Vg-gm curve of the MESFET does not have a decrease of the gm in the vicinity of Vg=0- +1V, thereby providing large power gain and preferable saturated output. |
