发明名称 |
Semiconductor device contg. bi:polar transistor - protected against breakdown by bipolar transistor safety device, esp. in electronic ignition for petrol engine |
摘要 |
<p>Semiconductor device comprises a semiconductor body contg. a bipolar transistor (I) protected against breakdown by a bipolar transistor (II) in which the collector and emitter of the (II) are connected respectively to the collector and base of the (I) and the base of the (II) is unconnected. The device may comprise a Darlington circuit with a control transistor (III) and an output transistor (IV), the base and collector of the (IV) being connected respectively to the emitter and collector of the (III), the base of the (III), the emitter of the (IV) and the common collector forming respectively the base, emitter and collector of the protected transistor.</p> |
申请公布号 |
NL8200395(A) |
申请公布日期 |
1983.09.01 |
申请号 |
NL19820000395 |
申请日期 |
1982.02.03 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN TE EINDHOVEN. |
发明人 |
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分类号 |
H03K17/082;(IPC1-7):03K17/08;01L27/04 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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