| 摘要 |
PURPOSE:To manufacture a semiconductor device having excellent high frequency characteristics by growing a semiconductor containing an impurity, increasing the impurity density only in source and drain regions, thereby reducing the resistance in the regions. CONSTITUTION:Silicon (Si) ions are implanted by semi-insulating arsenided gallium ion implantation to the surface layer of a plate 1 to form an operation layer 2, and a gate electrode 3 is formed by accumulating titanium tungsten silicide. With the gate 3 as a mask the n type layer 2 is removed to form holes 5, n<+> type source and drain regions 6, 6' are formed in holes 5 by a metal organic chemical vapor phase growing method with arsine (AsH3), trimethyl gallium (Ga(CH3)3) and nitrogen gas (N2) containing sulfided hydrogen (H2S) as dopant, thereby forming source and drain electrodes 7, 7' made of double layers of gold germanium-gold (AuGe/Au). |
